advanced power n-channel enhancement mode electronics corp. power mosfet simple drive requirement bv dss 30v low gate charge r ds(on) 22m fast switching characteristic i d 30a description absolute maximum ratings symbol units v ds v v gs v i d @t c =25 a i d @t c =100 a i dm a p d @t c =25 w t stg t j symbol value units rthj-c maximum thermal resistance, junction-case 4.5 /w rthj-a maximum thermal resistance, junction-ambient 62 /w data and specifications subject to change without notice AP42T03GP rohs-compliant product parameter rating drain-source voltage 30 gate-source voltage + 20 continuous drain current, v gs @ 10v 30 operating junction temperature range -55 to 150 continuous drain current, v gs @ 10v 18 pulsed drain current 1 120 storage temperature range total power dissipation 27.8 -55 to 150 20081127 1 thermal data parameter 1 the advanced power mosfets from apec provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. g d s a dvanced power mosfets from apec provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. g d s to-220(p) the to-220 package is widely preferred for commercial-industrial power applications and suited for low voltage applications such as dc/dc converters.
electrical characteristics@t j =25 o c(unless otherwise specified) symbol parameter test conditions min. typ. max. units bv dss drain-source breakdown voltage v gs =0v, i d =250ua 30 - - v r ds(on) static drain-source on-resistance 2 v gs =10v, i d =18a - - 22 m ? ?
fig 1. typical output characteristics fig 2. typical output characteristics fig 3. on-resistance v.s. gate voltage fig 4. normalized on-resistance v.s. junction temperature fig 5. forward characteristic of fig 6. gate threshold voltage v.s. reverse diode junction temperature 3 AP42T03GP 0 20 40 60 80 0.0 2.0 4.0 6.0 8.0 v ds , drain-to-source voltage (v) i d , drain current (a) t c =150 o c 10v 7.0v 6.0v 5.0v v g =4.0v 0 20 40 60 80 100 0.0 1.0 2.0 3.0 4.0 5.0 v ds , drain-to-source voltage (v) i d , drain current (a) t c =25 o c 10v 7.0v 6.0v 5.0v v g =4.0v 0.2 0.8 1.4 2.0 -50 0 50 100 150 t j , junction temperature ( o c) normalized r ds(on) i d =18a v g =10v 8 12 16 20 24 28 32 246810 v gs , gate-to-source voltage (v) r ds(on) (m ) i d =14a t c =25 : 0 4 8 12 16 20 0 0.4 0.8 1.2 1.6 v sd , source-to-drain voltage (v) i s (a) t j =25 o c t j =150 o c 0.0 0.4 0.8 1.2 1.6 -50 0 50 100 150 t j , junction temperature ( o c ) normalized v gs(th) (v)
fig 7. gate charge characteristics fig 8. typical capacitance characteristics fig 9. maximum safe operating area fig 10. effective transient thermal impedance fig 11. switching time waveform fig 12. gate charge waveform 4 AP42T03GP 0 1 10 100 1000 0.1 1 10 100 v ds ,drain-to-source voltage (v) i d (a) t c =25 o c s in g le puls e 100us 1ms 10ms 100ms dc 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 t , pulse width (s) normalized thermal response (r thjc ) p dm duty factor = t/t peak t j = p dm x r thjc + t c t t 0.02 0.01 0.05 0.1 0.2 duty factor = 0.5 single pulse 0 3 6 9 12 0 4 8 12 16 q g , total gate charge (nc) v gs , gate to source voltage (v) i d =18a v ds =15v v ds =18v v ds =24v 0 200 400 600 800 1000 1 5 9 13 17 21 25 29 v ds ,drain-to-source voltage (v) c (pf) f=1.0mhz c iss c oss c rss t d(on) t r t d(off) t f v ds v gs 10% 90% q v g 4.5v q gs q gd q g charge
package outline : to-220 millimeters min nom max a 4.25 4.48 4.70 b 0.65 0.80 0.90 b1 1.15 1.38 1.60 c 0.40 0.50 0.60 c1 1.00 1.20 1.40 e 9.70 10.00 10.40 e1 --- --- 11.50 e ---- 2.54 ---- l 12.70 13.60 14.50 l1 2.60 2.80 3.00 l2 1.00 1.40 1.80 l3 2.60 3.10 3.60 l4 14.70 15.50 16.00 l5 6.30 6.50 6.70 3.50 3.70 3.90 d 8.40 8.90 9.40 1.all dimensions are in millimeters. 2.dimension does not include mold protrusions. part marking information & packing : to-220 symbols advanced power electronics corp. e b b1 e d l3 l4 l1 l2 a c1 c l package code part number date code (ywwsss) y last digit of the year ww week sss sequence 42t03gp ywwsss logo l5 meet rohs requirement for low voltage mosfet only e1 5
|
